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PROFET
Data sheet BTS 6163 D
Smart Highside Power Switch
* Reverse battery protection by self turn on of power MOSFET
Reversave
Features
* Short circuit protection with latch * Current limitation * Overload protection * Thermal shutdown with restart * Overvoltage protection (including load dump) TO-252-5-1 * Loss of ground protection (DPAK 5 pin; less than half the size as TO 220 SMD) * Loss of Vbb protection (with external diode for charged inductive loads) * Very low standby current * Fast demagnetization of inductive loads * Electrostatic discharge (ESD) protection * Optimized static electromagnetic compatibility (EMC)
Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package
Vbb(on) RON IL(nom) IL(ISO) IL12(SC)
5.5 ... 62
V
20 m 5.5 A 17 A 70 A
Diagnostic Function
* Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown)
Application
* Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
Voltage source Overvoltage protection Current limit Gate protection
OUT R bb + V bb
1, 5
IL
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection
Current Sense Load
2
IN
ESD
Logic
I IN
Temperature sensor I IS
IS
PROFET
Load GND
VIN V IS
Logic GND
4
R IS
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Page 1 of 16
2003-Oct-01
PROFET
Pin 1 2 Tab/(3) 4 Symbol OUT IN Vbb IS O I + S Function
Data sheet BTS 6163 D
Output; output to the load; pin 1 and 5 must be externally shorted* . Input; activates the power switch if shorted to ground. Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted. Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) Output; output to the load; pin 1 and 5 must be externally shorted* .
5
OUT
O
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 24 V RI= 2 , RL= 4.4 , td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, 3) single pulse IL = 20 A, Vbb= 24V Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5k; C=100pF Current through input pin (DC) Current through current sense pin (DC)
see internal circuit diagrams page 9
Symbol Vbb Vbb VLoad dump 2) IL Tj Tstg Ptot EAS VESD IIN IIS
Values 62 48 70 self-limited -40 ...+150 -55 ...+150 59 0.25 3.0 +15, -120 +15, -120
Unit V V V A C W J kV mA
Input voltage slew rate Vbb 16V : dVbIN / dt Vbb > 16V 4): self-limited 20 V/s
1) 2) 3) 4)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10.
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Page 2 of 16
2003-Oct-01
PROFET Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 6):
Data sheet BTS 6163 D
min ----
Values typ max -1.1 80 -45 55
Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A VIN= 0, Vbb= 12..24V, IL = 7.5 A Tj=25 C: RON Tj=150 C: -----19 38 16 32 40 25 50 20 40 65 m
Tj=25 C: Tj=150 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) Tj=-40...150 C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON 0.5 V, TC = 85C, Tj 150C SMD 6), VON 0.5 V, TA = 85C, Tj 150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 3.9 , Tj=-40...150 C Slew rate on 25 to 50% VOUT, RL = 3.9 , Tj=-40...150 C Slew rate off 50 to 25% VOUT, RL = 3.9 , Tj=-40...150 C
VON(NL)
mV
IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff
17 5.5 -----
21.5 6.5 150 200 0.65 0.65
--300 550 1.0 1.2
A s
V/s V/s
5) 6)
See figure 7a on page 15. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3 of 16
2003-Oct-01
Data sheet BTS 6163 D
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Operating Parameters Operating voltage (VIN=0) Tj=-40...150 C: Vbb(on) 7) 8) Undervoltage shutdown VbIN(u) Undervoltage restart of charge pump Vbb(ucp) Overvoltage protection 9) Ibb=15 mA Standby current IIN=0 Reverse Battery Reverse battery voltage 10) On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 k, 8) Tj=25 C: RON(rev) Tj=150 C: Vbb= -12..-24V, VIN= 0, IL = -7.5 A, RIS = 1 k, Tj=25 C: Tj=150 C: Integrated resistor in Vbb line Rbb -Vbb VZ,IN Tj=-40...+120C: Ibb(off) Tj=150C:
5.5 --68 ---
-2.5 4 73 3 6
62 3.5 5.5 -6 14
V V V V A
--
--
16
V
------
19 35 18 33 100
25 44 23 40 150
m
Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) IL = -7.5 A, RIS = 1 k, Tj=25 C: -VON(inv) Tj=150 C: IL = -7.5 A, RIS = 1 k, Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) ---700 300 1 ---mV
ms
7)
VbIN=Vbb-VIN see diagram page 14. not subject to production test, specified by design 9) See also VON(CL) in circuit diagram page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode.
8)
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2003-Oct-01
Data sheet BTS 6163 D
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at VON = 6V14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 12V 14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 18V 14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 24V Tj =-40C: tm=170s Tj =25C: =+150C: Tj Short circuit current limit at VON = 30V Tj =-40C: tm=170s Tj =25C: =+150C: Tj 14) Short circuit current limit at VON = 45V Tj =-40C: Tj =25C: Tj =+150C: Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
IL6(SC) IL12(SC) IL18(SC) IL24(SC) IL30(SC) IL45(SC)
--50 --40 --30 --25 --20 --15 2.5 350
90 80 65 80 70 55 55 50 48 45 40 35 30 30 30 22 22 22 3.5 650
110 --100 --80 --60 --50 --35 --4.5 1200
A A A A A A
VON(SC) td(SC1)
V s s V C K
Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150C
min. value valid only if input "off-signal" time exceeds 30 s
Short circuit shutdown delay during on condition13) VON > VON(SC) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis
15)
td(SC2) VON(CL) Tjt
-63 150 --
2 67 175 10
-----
Tjt
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) not subject to production test, specified by design 15) See also figure 2b on page 12.
12)
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2003-Oct-01
Data sheet BTS 6163 D
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS 4.5 V IL = 30A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 7.5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 2.5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 0.5A, Tj = -40C: Tj = +25C: Tj = +150C: IIN = 0 (e.g. during deenergizing of inductive loads): Sense current under fault conditions
VON>1V, typ
17)
kILIS
-- 9000
--
8300 9000 10000 8200 9000 9800 8100 8800 9500 8200 8900 10000 8100 8900 9800 8000 8700 9500 7200 8900 11000 7500 8900 10600 7700 8700 10000 5000 9500 16000 6000 10000 15000 7500 10500 13000 -IIS,fault IIS,lim 4.0 4.0 350 ---0 5.2 6.0 650 0.1 1.0 250 -7.5 7.5 1200 0.5 2.0 500 mA mA s A A s s V
Tj = -40...+150C: Tj = -40...+150C:
Sense current saturation
VON<1V, typ
Fault-Sense signal delay after input current positive tdelay(fault) slope, VON >1V, Tj = -40...+150C Current sense leakage current, IIN = 0 Current sense offset current, VIN = 0, IL 0 Current sense settling time to IIS static after input current positive slope, 18) IL = 0 20 A, Tj= -40...+150C Current sense settling time during on condition, 18) IL = 10 20 A, Tj= -40...+150C Overvoltage protection Ibb = 15 mA Tj = -40...+150C: IIS(LL) IIS(LH) tson(IS)
tslc(IS) VZ,IS
-68
50 73
100 --
16) 17)
See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design
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2003-Oct-01
Data sheet BTS 6163 D
Parameter and Conditions
at Tj= 25, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Input Required current capability of input switch IIN(on) Tj =-40..+150C: Input current for turn-off Tj =-40..+150C: IIN(off)
---
1.6 --
2.4 30
mA A
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2003-Oct-01
Data sheet BTS 6163 D Truth Table
Input Current level L H L H L H L H L H L H Output level L H L H L L L L H H Z H Current Sense IIS 0 (IIS(LL)) nominal 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) Normal operation Overload 19) Short circuit to GND 20) Overtemperature Short circuit to Vbb Open load
L = "Low" Level H = "High" Level
Z = high impedance, potential depends on external circuit
Terms
I bb VbIN 3 Vbb IL V bb RIN V
IN
VON OUT
2
IN PROFET IS
1,5
I IN
VbIS
4
I IS DS VOUT
VIS
R IS
Two or more devices can easily be connected in parallel to increase load current capability.
19) 20)
Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.) . See also page 11. Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS
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2003-Oct-01
Data sheet BTS 6163 D
Input circuit (ESD protection)
V bb
Inductive and overvoltage output clamp
+ Vbb VZ1 V
ON
V V bIN
ZD
R bb
Z,IN
IN I
OUT
PROFET
IN
VON is clamped to VON(Cl) = 67 V typ
V IN
ESD-Zener diode: 73 V typ.., max 15 mA;
Overvoltage protection of logic part
+ Vbb
Current sense output
Normal operation
R IN
V Z,IN V Z,IS
IN
R bb
Vbb Rbb IIS,fault
ZD
Logic
V
V OUT
Z,IS IS
PROFET
R
V
IS
IIS R
IS
R
IS
V
Z,VIS
V
IS
Signal GND
VZ,IS = 73 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than
Rbb = 100 typ., VZ,IN = VZ,IS = 73 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 73 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
Vbb - 5V . 7.5mA
Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open.
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Page 9 of 16
2003-Oct-01
Data sheet BTS 6163 D
Reversave (Reverse battery protection)
- V bb
R
bb
Vbb disconnect with energised inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD<63 V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. Version a:
IN OUT
R IN
Logic
Power Transistor
V
bb IN
V
bb OUT
PROFET
RL D
Signal GND
R IS
Power GND
IS VD V ZL
RIS typ. 1 k. Add RIN for reverse battery protection in applications with Vbb above 16V; recommended value:
0.08 A 1 1 + = RIN RIS | Vbb | -12V
To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration.
Inverse load current operation
Vbb
V bb
+ IN
- IL
PROFET IS OUT
-
V OUT + IIS
-
V IN V IS
R IS
The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible!
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Page 10 of 16
2003-Oct-01
Data sheet BTS 6163 D
Short circuit detection
Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 s).
Inductive load switch-off energy dissipation
E bb E AS V ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL
Overload detection
Fault Condition: VON > 1 V typ.
+ V bb
V bb
VO N
{
OUT Logic unit detection circuit
RIS
ER
Energy stored in load inductance:
Short circuit
Short circuit is a combination of primary and secondary impedance's and a resistance's.
EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 :
2
5uH IN 10mOhm
V
bb
OUT L SC
EAS=
PROFET
IL* L (V + |VOUT(CL)|) 2*RL bb
ln (1+ |V
IL*RL
OUT(CL)|
)
IS I
R SC
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 24 V, RL = 0
1000 L [m H ]
IN SC Z L
V bb
combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event:
Allowable
100
[uH] 15
L SC
V bb : 32V 36V
40V 48V
10
10 5 0 0 100 200
1
0 ,1
R SC 300 [mOhm]
0 ,0 1 1 10 I_ L [A ] 1 0 0
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Page 11 of 16
2003-Oct-01
Data sheet BTS 6163 D
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IIL
IL
tslc(IS)
t slc(IS)
IIS
Load 1 Load 2
IIS,faut
/ I IS,lim
t
IIS
tson(IS)
t soff(IS)
t
As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. Figure 2b: Switching an inductive load:
The sense signal is not valid during a settling time after turn-on/off and after change of load current.
IIN VOUT VON(CL)
IL
IIS
t
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Page 12 of 16
2003-Oct-01
Data sheet BTS 6163 D
Figure 3a: Typ. current limitation characteristic
[A] 80 I L(SC)
Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0.
IIN
IL
60
Internal Switch off
td(SC2)
depending on the external impedance
40
VON
20
1V typ.
0 0V
ON(SC)
V ON 10 20 30 [V] 50
IIS
IL k ilis
I
IS,fault
t
In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0.
Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if TjIIN
IIN
VON > VON(SC) IL(SC)
IL
IIS
IIS,fault
td(SC1) tm IIS I
IS,fault
VOUT
Auto Restart
tdelay(fault)
t
Shut down remains latched until next reset via input.
Tj
t
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Page 13 of 16
2003-Oct-01
Data sheet BTS 6163 D
Figure 4b: Overload TjIIN
IL Vbb -V OUT
3
2
VON=1V typ. RON *I L,lim
I L,lim
IS
1
t
IL k ilis IIS,lim IIS,fault
I IS(LH) 0 0
IL 10 20 30 40 [A]
Figure 5a: Undervoltage restart of charge pump, overvoltage clamp
Figure 6b: Current sense ratio22:
VOUT
kILIS 20000
VIN = 0
15000
V
dynamic, short Undervoltage not below VbIN(u)
ON(CL)
10000
5000
IIN = 0
VON(CL) 0 0 VbIN(u) VbIN(ucp) 10
0 5 10 20
IL [A] 30
V12 bb
22
This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device.
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Page 14 of 16
2003-Oct-01
Data sheet BTS 6163 D
Figure 7a: Output voltage drop versus load current:
[V] 0.1
VON
R V ON(NL)
ON
0.05
0.0 0 1 2 3 4 5 6 7
IL [A]
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Page 15 of 16
2003-Oct-01
Data sheet BTS 6163 D
Package and Ordering Code
All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code Ordering code
6.5 +0.15 -0.10
BTS6163D Q67060-S7424-A103
2.3 +0.05 -0.10 B A 1 0.1 0...0.15 0.9 +0.08 -0.04
10.1
5.4 0.1
9.9 0.5 6.22 -0.2
0.8 0.15
(4.17)
0.15 max per side
0.51 min
5x0.6 0.1 1.14
0.5 +0.08 -0.04 0.1
4.56
0.25
M
AB
GPT09161
All metal surfaces tin plated, except area of cut.
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2003-Oct-01

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